PART |
Description |
Maker |
KP029J P0120009P |
2W GaAs Power FET (Pb-Free Type)
|
EUDYNA[Eudyna Devices Inc]
|
KP028J |
1W GaAs Power FET (Pb-Free Type)
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
MGF0911A 0911A |
From old datasheet system MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
NE8500100 NE8500100-RG NE8500100-WB NE500100 NE500 |
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp. NEC[NEC]
|
MGF0907 MGF0907B |
L /S BAND POWER GaAs FET MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
RJK0379DPA10 RJK0379DPA-00-J53 |
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching 50 A, 30 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND LEAD FREE, WPAK-8
|
Renesas Electronics Corporation
|
RJK03F6DNS-00-J5 |
30 A, 30 V, 0.0064 ohm, N-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND LEAD FREE, HWSON-8 Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET L-Band Medium & High Power GaAs FET
|
FUJITSU LTD EUDYNA[Eudyna Devices Inc]
|
FLL200IB-3 FLL200IB-2 FLL200IB-1 |
L-Band Medium & High Power GaAs FET L-Band Medium & High Power GaAs FET L波段中等
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. Sumitomo Electric Industries, Ltd.
|
CGD985HCI |
1 GHz, 25 dB gain GaAs high output power doubler CGD985HCI<SOT115J|<<<1<Always Pb-free,;CGD985HCI/01<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|